Optical investigation of stacked absorber type black border on EUV mask

Daimu Ikeya; Yohei Ikebe; Tsutomu Shoki

doi:10.1117/12.3026940

18 September 2024 Optical investigation of stacked absorber type black border on EUV mask

Daimu Ikeya, Yohei Ikebe, Tsutomu Shoki

Proceedings Volume 13273, 39th European Mask and Lithography Conference (EMLC 2024); 132730L (2024) https://doi.org/10.1117/12.3026940
Event: 39th European Mask and Lithography Conference (EMLC 2024), 2024, Grenoble, France

Abstract

In EUV lithography, the leaked light reflected from the border of the image field (image border) can cause unintended pattern transfer on die edge. To prevent such an unexpected exposure, low reflectivity image border, referred to as black border, has been widely adopted. However, the current multilayer etched type black border can have insufficient specifications required for high NA lithography in terms of the reflectivity and border edge quality. In this paper, we investigated stacked absorber type black border, where an additional absorber is stacked on the conventional absorber, as an alternative candidate through optical simulation and preliminary experiment. The simulation shows that stepwise nk change in the additional absorber is an effective design to reduce EUV and DUV reflectivity significantly. In the experiment, we fabricated a test mask blank with the same film structure as the simulation model and measured the reflectivity. It is successfully confirmed that stacked absorber type black border has better optical properties than multilayer etched type.

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Daimu Ikeya, Yohei Ikebe, and Tsutomu Shoki "Optical investigation of stacked absorber type black border on EUV mask", Proc. SPIE 13273, 39th European Mask and Lithography Conference (EMLC 2024), 132730L (18 September 2024); https://doi.org/10.1117/12.3026940

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KEYWORDS

Reflectivity

Extreme ultraviolet

Deep ultraviolet

Design

Lithography

Extreme ultraviolet lithography

Multilayers

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