CONFERENCE PROCEEDINGS
Advanced Search
Home > Proceedings > Volume 13273 > Article
Paper
18 September 2024 New optical metrology method for measuring shape of a lithography photo mask
Guillermo Castro Luis, Kiril Ivanov Kurtev, Miguel Jiménez, Juan M. Trujillo-Sevilla, Jose Manuel Ramos-Rodríguez, Jan O. Gaudestad
Author Affiliations +
Proceedings Volume 13273, 39th European Mask and Lithography Conference (EMLC 2024); 132730T (2024) https://doi.org/10.1117/12.3026887
Event: 39th European Mask and Lithography Conference (EMLC 2024), 2024, Grenoble, France
Abstract
On product overlay (OPO), with its continually shrinking budget, remains a constraint in increasing device yield. The OPO performance consists of both scanner and process-related contributors. Both groups need to be addressed and optimized to minimize the overlay in order to keep up with Moore’s law. Examples of process-related overlay contributors are wafer distortion due to patterned stressed thin films and/or etch. Masks can never be made identical since they represent different layers of the device. It has been shown that shape measurements of the wafer can help to correct for most process-induced wafer distortions up to the 3rd order. However, another contributor to overlay challenges is related to photomask flatness. Wafer overlay errors due to non-flatness and thickness variations of a mask need to be minimized. Overlay metrology capability lags the need for improved overlay control, especially for multi-patterning applications. In this paper, we present a new metrology method that generates a very high-resolution shape map of an entire optical photomask optimized for DUV lithography. The technique is measuring the wave front phase change of the reflected light from both the front and backside of a quartz photomask. In this paper we introduce Wave Front Phase Imaging (WFPI), a new method for measuring flatness of an optical photomask that generates a shape map based on local slope. It collects 810 thousand (K) data points on an 86.4mm × 86.4mm area with a spatial resolution of 96μm.
(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
Citation Download Citation
Guillermo Castro Luis, Kiril Ivanov Kurtev, Miguel Jiménez, Juan M. Trujillo-Sevilla, Jose Manuel Ramos-Rodríguez, and Jan O. Gaudestad "New optical metrology method for measuring shape of a lithography photo mask", Proc. SPIE 13273, 39th European Mask and Lithography Conference (EMLC 2024), 132730T (18 September 2024); https://doi.org/10.1117/12.3026887
ACCESS THE FULL ARTICLE
ORGANIZATIONAL
Sign in with credentials provided by your organization.
INSTITUTIONAL
Select your institution to access the SPIE Digital Library.
SELECT YOUR INSTITUTION
PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
PERSONAL SIGN IN
No SPIE Account? Create one
PURCHASE THIS CONTENT
SUBSCRIBE TO DIGITAL LIBRARY
50 downloads per 1-year subscription
Members: $195
Non-members: $335 ADD TO CART
25 downloads per 1 - year subscription
Members: $145
Non-members: $250 ADD TO CART
PURCHASE SINGLE ARTICLE
Includes PDF, HTML & Video, when available
Members: $17.00
Non-members: $21.00 ADD TO CART
PROCEEDINGS
 7 PAGES
DOWNLOAD PAPER SAVE TO MY LIBRARY
GET CITATION
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Photomasks
Reflection
Chromium
Quartz
Distortion
Semiconducting wafers
Wavefronts
RELATED CONTENT
Subscribe to Digital Library
Receive Erratum Email Alert
Back to Top