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With the scaling down of feature size, the proportion of region sensitive to single-event effect (SEE) with respect to active region increases. The simulation challenges the anti-radiation technology for space application. Silicon-on insulator (SOI) technology has been utilized for radiation hardened integrated circuits. This work takes advantages of TCAD tool to simulate SEE in SOI NMOSFET, focusing on the effects of linear energy transfer (LET) of injected heavy-ion, top silicon film thickness, drain bias, and floating body effect on single event transients (SET) pulse. Mechanisms are investigated, which provides guide for radiation hard SOI technology.
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