33-GHz bandwidth planar InAlAs avalanche photodiodes for 50-Gbit/s PON applications

Shuai Wang; Han Ye; Liyan Geng; Yimiao Chu; Yu Zheng; Qin Han

doi:10.1117/12.3042471

5 December 2024 33-GHz bandwidth planar InAlAs avalanche photodiodes for 50-Gbit/s PON applications

Shuai Wang, Han Ye, Liyan Geng, Yimiao Chu, Yu Zheng, Qin Han

Proceedings Volume 13418, Fifteenth International Conference on Information Optics and Photonics (CIOP 2024); 1341807 (2024) https://doi.org/10.1117/12.3042471
Event: 15th International Conference on Information Optics and Photonics (CIOP2024), 2024, Xi’an, China

Abstract

A top-illuminated planar InAlAs/InGaAs Avalanche Photodiode (APD) with Separation Absorption, Charge and Multiplication (SACM) structure has been demonstrated. The fabricated APD results showed that the maximum 3dB bandwidth of the APD reaches 33 GHz at M=2. The dark current is 1 μA at 0.9 breakdown voltage, and the unit responsivity is 0.3 A/W operating at 1.55 μm. The maximum gain of the device is 20, when the incident light intensity is 20 μW. It is important to emphasize that the active area diameter of the fabricated device is 15 μm. Such a large active area diameter provides greater alignment tolerance for fiber coupling compared to using waveguide structures. These characteristics demonstrate the potential of planar InAlAs/InGaAs -APDs for 50-Gbit/s Passive Optical Networks (PONs) in optical communication systems.

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Shuai Wang, Han Ye, Liyan Geng, Yimiao Chu, Yu Zheng, and Qin Han "33-GHz bandwidth planar InAlAs avalanche photodiodes for 50-Gbit/s PON applications", Proc. SPIE 13418, Fifteenth International Conference on Information Optics and Photonics (CIOP 2024), 1341807 (5 December 2024); https://doi.org/10.1117/12.3042471

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KEYWORDS

Avalanche photodetectors

Electric fields

Diffusion

Avalanche photodiodes

Dark current

Photocurrent

Electrodes

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