High-speed 850 nm VCSELs with ultra-low chip-parasitics

Yun Sun; Meng Xun; Guanzhong Pan; Kaidian Huang; Wenjing Jiang; Bingxin Yao; Runze Zhang; Chao Han; Dexin Wu

doi:10.1117/12.3048731

5 December 2024 High-speed 850 nm VCSELs with ultra-low chip-parasitics

Yun Sun, Meng Xun, Guanzhong Pan, Kaidian Huang, Wenjing Jiang, Bingxin Yao, Runze Zhang, Chao Han, Dexin Wu

Proceedings Volume 13418, Fifteenth International Conference on Information Optics and Photonics (CIOP 2024); 134183H (2024) https://doi.org/10.1117/12.3048731
Event: 15th International Conference on Information Optics and Photonics (CIOP2024), 2024, Xi’an, China

Abstract

In this work, the extrinsic parasitics of oxide confined 850 nm VCSELs are investigated by two different designs: single mesa with the backside n-contacts (design A) and double mesa with dual-top contact (design B). The static and dynamic characteristics of both designs with about 7 μm aperture are measured and analyzed. The maximum modulation bandwidth of design A is only 15.1 GHz. By utilizing a relatively low dielectric constant BCB layer with the thickness of around 8.7 μm surrounding the two mesas in design B, the pad capacitance value is reduced to only about 9fF which is one third of that in design A. As a result, the modulation bandwidth of design B is significantly increased and reaches to 27 GHz which is a factor of 1.8 higher than that of design A. In addition, the slope efficiency increases for design B with double mesa and dual-top contact structure. Thus, design B is preferred for high-speed VCSELs to obtain good static and dynamic performance.

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Yun Sun, Meng Xun, Guanzhong Pan, Kaidian Huang, Wenjing Jiang, Bingxin Yao, Runze Zhang, Chao Han, and Dexin Wu "High-speed 850 nm VCSELs with ultra-low chip-parasitics", Proc. SPIE 13418, Fifteenth International Conference on Information Optics and Photonics (CIOP 2024), 134183H (5 December 2024); https://doi.org/10.1117/12.3048731

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