Reactive ion etching of InP and its optical assessment

Roderick W. MacLeod; Cliva M. Sotomayor-Torres; Manijeh Razeghi; C. R. Stanley; Chris D. W. Wilkinson

doi:10.1117/12.24418

1 March 1991 Reactive ion etching of InP and its optical assessment

Roderick W. MacLeod, Cliva M. Sotomayor-Torres, Manijeh Razeghi, C. R. Stanley, Chris D. W. Wilkinson

Proceedings Volume 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization; (1991) https://doi.org/10.1117/12.24418
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany

Abstract

A method for reactive ion etching (RIE) InP has been developed using CH4/H2 which allows the fabrication of dots of 6Onm diameter and 200nm height with good aspect ratio. The effect of the etch on the optical quality of the InP surface is investigated by phonon Raman scattering and 5K luminescence.

Citation Download Citation

Roderick W. MacLeod, Cliva M. Sotomayor-Torres, Manijeh Razeghi, C. R. Stanley, and Chris D. W. Wilkinson "Reactive ion etching of InP and its optical assessment", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); https://doi.org/10.1117/12.24418

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