Paper
1 June 1991 DQN photoresist with tetrahydroxydiphenylmethane as ballasting group in PAC
Chao Huei Tzeng, Dhei-Jhai Lin, Song-Shiang Lin, Dong-Tsair Huang, Hwang-Kuen Lin
Author Affiliations +
Abstract
A new photoactive compound (PAC) has been developed for a DQN (Diazonaphtho Quinone Novolak) resist system. The PAC is an esterification product of 1,2-naphthoquinone diazide-5-sulfonyl chloride and 2,3,4,4'-tetrahydroxydiphenylmethane (2344-THDM), which is a hydrogenation product of 2,3,4,4'-tetrahydroxybenzophenone (2344-THBP). The resist formulated from the cresol novolak and PAC exhibited fairly good light absorption and bleaching characteristics in the region of 300-45 nm. The resist performances such as resolution, photospeed, and exposure and defocus latitude in the g-line and i-line steppers are shown, respectively.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chao Huei Tzeng, Dhei-Jhai Lin, Song-Shiang Lin, Dong-Tsair Huang, and Hwang-Kuen Lin "DQN photoresist with tetrahydroxydiphenylmethane as ballasting group in PAC", Proc. SPIE 1466, Advances in Resist Technology and Processing VIII, (1 June 1991); https://doi.org/10.1117/12.46395
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Cited by 1 scholarly publication.
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KEYWORDS
Picture Archiving and Communication System

Photoresist materials

Lithography

Scanning electron microscopy

Absorption

Nickel

Semiconducting wafers

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