Preparation and O+ implantation of Y-Ba-Cu-O superconducting thin films by sputtering and RTA process

Xiang Jun Fan; Huai Xi Guo; Chang Zhong Jiang; You Gui Pen; Chang Liu; Zhi Lin Pen; Hong Tao Li

doi:10.1117/12.47288

1 November 1991 Preparation and O⁺ implantation of Y-Ba-Cu-O superconducting thin films by sputtering and RTA process

Xiang Jun Fan, Huai Xi Guo, Chang Zhong Jiang, You Gui Pen, Chang Liu, Zhi Lin Pen, Hong Tao Li

Proceedings Volume 1519, International Conference on Thin Film Physics and Applications; (1991) https://doi.org/10.1117/12.47288
Event: International Conference on Thin Film Physics and Applications, 1991, Shanghai, China

Abstract

An ion beam sputtering and a magnetron sputtering technique was respectively employed to deposit Y₁B₂aCu₃O₇ thin films. After deposition, the films were annealed by three-step rapid thermal annealing (RTA) in flowing oxygen. The zero resistance temperature of the superconducting thin films were achieved above 80 K. X-ray diffraction shows that the sputtered films have a c-axis orientation perpendicular to the film surface like epitaxial film. It is found that the proportion of yttrium was higher than the composition of the thin film within 60A from the surface measured by XPS. The EPMA shows that the proportion of yttrium was considerably decreased by the annealing procedure. 120 Kev O⁺ has been implanted into Y-Ba-Cu-O as-deposited films. The initial values of resistance were strongly reduced with increasing O^o doses. The resistance vs. temperature curves of implanted films are characterized as a semiconductor with a negative temperature coefficient.

Citation Download Citation

Xiang Jun Fan, Huai Xi Guo, Chang Zhong Jiang, You Gui Pen, Chang Liu, Zhi Lin Pen, and Hong Tao Li "Preparation and O⁺ implantation of Y-Ba-Cu-O superconducting thin films by sputtering and RTA process", Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); https://doi.org/10.1117/12.47288

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