Electrical properties of indium antimony films

Surinder Kaur; Taminder Singh; R. K. Bedi

doi:10.1117/12.57006

1 February 1992 Electrical properties of indium antimony films

Surinder Kaur, Taminder Singh, R. K. Bedi

Proceedings Volume 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits; (1992) https://doi.org/10.1117/12.57006
Event: Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, 1992, Madras, India

Abstract

The electrical properties of In_xSb_1-x(0 < x < 1) alloy films deposited on glass substrate in a vacuum of 10^-5 torr have been studied. It is observed that films with composition around x equals 0.6 show minimum resistivity, maximum carrier mobility and more order in structure. The charge carriers appear to be holes for all compositions. The thermoelectric power of InSb films increase initially and shows maxima around x equals 0.2, beyond which a decrease is found with the increase in In content.

Citation Download Citation

Surinder Kaur, Taminder Singh, and R. K. Bedi "Electrical properties of indium antimony films", Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); https://doi.org/10.1117/12.57006

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