High-sensitivity photorefractivity in bulk and multiple-quantum-well semiconductors

Afshin Partovi; Alastair M. Glass; Robert D. Feldman

doi:10.1117/12.50750

1 December 1991 High-sensitivity photorefractivity in bulk and multiple-quantum-well semiconductors

Afshin Partovi, Alastair M. Glass, Robert D. Feldman

Proceedings Volume 1561, Inorganic Crystals for Optics, Electro-Optics, and Frequency Conversion; (1991) https://doi.org/10.1117/12.50750
Event: San Diego, '91, 1991, San Diego, CA, United States

Abstract

Band-edge photorefractive effect provides large sensitivities and nonlinearities in bulk and multiple quantum well semiconductors. Recent results in InP:Fe and a novel photorefractive device based on the quantum confined stark effect in semi-insulating II-VI multiple quantum wells are reported.

Citation Download Citation

Afshin Partovi, Alastair M. Glass, and Robert D. Feldman "High-sensitivity photorefractivity in bulk and multiple-quantum-well semiconductors", Proc. SPIE 1561, Inorganic Crystals for Optics, Electro-Optics, and Frequency Conversion, (1 December 1991); https://doi.org/10.1117/12.50750

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available