Fully self-consistent model of an integratable buried-heterostructure InP/InGaAsP laser diode

P. C. R. Gurney

doi:10.1117/12.2321808

1 December 1992 Fully self-consistent model of an integratable buried-heterostructure InP/InGaAsP laser diode

P. C. R. Gurney

Proceedings Volume 1582, Integrated Optoelectronics for Communication and Processing; (1992) https://doi.org/10.1117/12.2321808
Event: OE Fiber, 1991, Boston, MA, United States

Abstract

A self-consistent model of a buried heterostructure semiconductor injection laser is presented which simulates the static electrical and optical properties of buried ridge and constricted mesa lasers. It includes the effects of the superposition of all lasing modes. Results have been obtained showing that high p-type doping of the cap region has a beneficial effect on leakage current and the lateral optical field, especially at high output powers, leading to increased niodulatioii bandwidth.

Citation Download Citation

P. C. R. Gurney "Fully self-consistent model of an integratable buried-heterostructure InP/InGaAsP laser diode", Proc. SPIE 1582, Integrated Optoelectronics for Communication and Processing, (1 December 1992); https://doi.org/10.1117/12.2321808

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