Time domain simulation and modeling of Si-GaAs MSM photodetectors

R. T. Kollipara; Thomas K. Plant; Vijai K. Tripathi

doi:10.1117/12.636972

16 December 1992 Time domain simulation and modeling of Si-GaAs MSM photodetectors

R. T. Kollipara, Thomas K. Plant, Vijai K. Tripathi

Proceedings Volume 1622, Emerging Optoelectronic Technologies; (1992) https://doi.org/10.1117/12.636972
Event: Emerging OE Technologies, Bangalore, India, 1991, Bangalore, India

Abstract

The two-dimensional modeling of the semi-insulating gallium arsenide (SI-GaAs) interdigitated photodetectors is presented. The model considers full bipolar transport, effects of nonuniform carrier generation, field dependent mobilities, carrier diffusion, recombination and includes the effects of the external circuit elements. Dynamic simulation is performed after applying an ideal optical impulse and the simulated response is compared with the experimentally observed response.

Citation Download Citation

R. T. Kollipara, Thomas K. Plant, and Vijai K. Tripathi "Time domain simulation and modeling of Si-GaAs MSM photodetectors", Proc. SPIE 1622, Emerging Optoelectronic Technologies, (16 December 1992); https://doi.org/10.1117/12.636972

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