Optically triggered semiconductor switch for a low-impedance Blumlein generator

Ulf Katschinski; Juergen G. H. Salge

doi:10.1117/12.59056

12 May 1992 Optically triggered semiconductor switch for a low-impedance Blumlein generator

Ulf Katschinski, Juergen G. H. Salge

Proceedings Volume 1632, Optically Activated Switching II; (1992) https://doi.org/10.1117/12.59056
Event: OE/LASE '92, 1992, Los Angeles, CA, United States

Abstract

The "Applied-B-Diode" used for the pulse generator KALIF at the Kernforschungszentrum Karisruhe needs uniform anode plasmas which should be established by a 30-50 kV pulse, duration 20 ns, delivered from a generator with an impedance of the order of 0. 1 (. The pulse risetime and the jitter has to be in the range of 1ns. Investigations have demonstrated that optically triggered semiconductor switches have the best chances to meet these requirements. The paper outlines the design of the pulse generator and the optically triggered semiconductor switch concept. In addition some experimental results are reported.

Citation Download Citation

Ulf Katschinski and Juergen G. H. Salge "Optically triggered semiconductor switch for a low-impedance Blumlein generator", Proc. SPIE 1632, Optically Activated Switching II, (12 May 1992); https://doi.org/10.1117/12.59056

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