Paper
26 June 1992 Composition dependence of the dry etching of MOCVD-grown AlxGa1-xAs
Graciela R. Guel, Christian F. Schaus, Kevin J. Malloy
Author Affiliations +
Abstract
Ar+ ion milling of A1xGa1-xAs layers grown by Low Pressure MOCVD, with aluminum compositions from 10 to 80% and for ion energies from 300to 1200 eV is reported in this work. The etch rate decreases with Al composition and increases with ion energy. The ion milling rate was found to depend exponentially on the ion energy, with an activation energy of 0.02 eV. Results are compared with the milling of a GaAs control sample and device layers etched under similar conditions. Etching was also studied as a function of ion angle-of-incidence.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Graciela R. Guel, Christian F. Schaus, and Kevin J. Malloy "Composition dependence of the dry etching of MOCVD-grown AlxGa1-xAs", Proc. SPIE 1634, Laser Diode Technology and Applications IV, (26 June 1992); https://doi.org/10.1117/12.59175
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KEYWORDS
Ions

Aluminum

Etching

Dry etching

Gallium arsenide

Photoresist materials

Metalorganic chemical vapor deposition

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