Paper
26 June 1992 Fundamental transverse-mode 150-mW semiconductor laser for an SHG light source
Keiichi Yodoshi, Norio Tabuchi, Atsushi Tajiri, Kimihide Minakuchi, Yasuyuki Bessho, Koji Komeda, Yasuaki Inoue, Koji Tominaga, Takao Yamaguchi
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Abstract
A highly reliable, 150 mW high-power semiconductor laser that oscillates at a wavelength of 860 nm has been developed. This device has a 0.7 jim thick p-cladding layer, a 900 jim long cavity length, and current-blocking regions near the cavity facets for high output power and high reliability. Stable, fundamental transverse mode and single longitudinal mode operation were obtained up to 230 mW, and the maximum output power was 350 mW under CW operation. Stable operation under 150 mW at 50°C was confirmed for more than 2000 hrs.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Keiichi Yodoshi, Norio Tabuchi, Atsushi Tajiri, Kimihide Minakuchi, Yasuyuki Bessho, Koji Komeda, Yasuaki Inoue, Koji Tominaga, and Takao Yamaguchi "Fundamental transverse-mode 150-mW semiconductor laser for an SHG light source", Proc. SPIE 1634, Laser Diode Technology and Applications IV, (26 June 1992); https://doi.org/10.1117/12.59153
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KEYWORDS
Semiconductor lasers

Second-harmonic generation

Absorption

High power lasers

Light sources

Cladding

Continuous wave operation

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