Paper
26 June 1992 High power GaInAs lasers with distributed Bragg reflectors
Stephen O'Brien, Ross Parke, David F. Welch, David G. Mehuys, Donald R. Scifres
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Abstract
Single-mode strained-layer lasers have been fabricated which use buried second-order gratings for distributed Bragg reflectors. The lasers contain a strained GaInAs quantum well in the active region and operate in an edge emitting fashion with CW powers in excess of 110 mW. Single longitudinal and transverse mode operation is maintained at about 971.9 nm up to 42 mW. Total power conversion efficiencies as high as 28 percent have been observed. The longitudinal and transverse mode behavior is stable under 90 percent amplitude modulation with 50 percent duty cycle pulses at 10 kHz and 10 MHz. Preliminary life-test data at 40 C also indicate room temperature lifetimes in excess of 45,000 hours.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Stephen O'Brien, Ross Parke, David F. Welch, David G. Mehuys, and Donald R. Scifres "High power GaInAs lasers with distributed Bragg reflectors", Proc. SPIE 1634, Laser Diode Technology and Applications IV, (26 June 1992); https://doi.org/10.1117/12.59152
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KEYWORDS
Semiconductor lasers

Continuous wave operation

Laser damage threshold

Distributed Bragg reflectors

High power lasers

Indium gallium arsenide

Amplitude modulation

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