Luminescence properties of Al0.48In0.52As under hydrostatic pressure

Hai-Ping Zhou; Cliva M. Sotomayor-Torres

doi:10.1117/12.60445

1 July 1992 Luminescence properties of Al_0.48In_0.52As under hydrostatic pressure

Hai-Ping Zhou, Cliva M. Sotomayor-Torres

Proceedings Volume 1678, Spectroscopic Characterization Techniques for Semiconductor Technology IV; (1992) https://doi.org/10.1117/12.60445
Event: Semiconductors '92, 1992, Somerset, NJ, United States

Abstract

The low-temperature photoluminescence (PL) and photoluminescence excitation (PLE) spectra characteristics of Al_0.48In_0.52As have been studied under high pressure from 1 bar up to 92 kbar. We have obtained, for the first time, the (Gamma) -(Chi) crossover critical pressure P_c (approximately 52.5 +/- 0.5 kbar), the linear pressure coefficients (alpha) ^(Gamma ) and (alpha) ^(Chi ) (7.9 meV/kbar and -2.9 meV/kbar, respectively) at helium temperature. By measuring temperature and excitation intensity dependences of the PL spectra together with the PLE spectra, we have demonstrated that the low-temperature luminescence of the Al_0.48In_0.52As is not excitonic but due to (D degree(s), A degree(s))transitions with a relatively deep acceptor of 68 meV, which occurs in both the direct- and indirect-band gap. We suggest that the shallow donor ground state associated with the (Chi) - and (Gamma) -conduction bands seem to be tied quite rigidly to these conduction bands. Variations in the donor binding energies with the pressure and the direct-indirect crossover seem to be minor.

Citation Download Citation

Hai-Ping Zhou and Cliva M. Sotomayor-Torres "Luminescence properties of Al_0.48In_0.52As under hydrostatic pressure", Proc. SPIE 1678, Spectroscopic Characterization Techniques for Semiconductor Technology IV, (1 July 1992); https://doi.org/10.1117/12.60445

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