Design and fabrication of InGaAsP/InP waveguide modulators for microwave applications

Paul K. L. Yu; Yet Zen Liu; Albert L. Kellner; Andrew R. Williams; Benson C. Lam; X. S. Jiang

doi:10.1117/12.138398

2 December 1992 Design and fabrication of InGaAsP/InP waveguide modulators for microwave applications

Paul K. L. Yu, Yet Zen Liu, Albert L. Kellner, Andrew R. Williams, Benson C. Lam, X. S. Jiang

Proceedings Volume 1703, Optical Technology for Microwave Applications VI and Optoelectronic Signal Processing for Phased-Array Antennas III; (1992) https://doi.org/10.1117/12.138398
Event: Aerospace Sensing, 1992, Orlando, FL, United States

Abstract

InGaAs/InP multiple quantum well electroabsorption modulators grown by MOCVD are designed and fabricated for 1.5 micrometers wavelength operation. For rib loaded waveguide modulators fabricated on n-InP substrate with a 3 micrometers rib width and a 2 micrometers intrinsic waveguide layer, a capacitance of 0.2 to 0.3 pF and a reverse breakdown voltage > 20 V are obtained. The extinction ratio of the modulators is more than 14 dB and the 3 dB optical bandwidth is 18 GHz. The modulator's RF efficiency and optical insertion loss still need to be improved. For modulators made on semi-insulating InP substrate, a capacitance in the range 0.1 to 0.2 pF is measured.

Citation Download Citation

Paul K. L. Yu, Yet Zen Liu, Albert L. Kellner, Andrew R. Williams, Benson C. Lam, and X. S. Jiang "Design and fabrication of InGaAsP/InP waveguide modulators for microwave applications", Proc. SPIE 1703, Optical Technology for Microwave Applications VI and Optoelectronic Signal Processing for Phased-Array Antennas III, (2 December 1992); https://doi.org/10.1117/12.138398

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