Paper
13 January 1993 Novel family of optical and optoelectronic elements for information processing using the current filament in semiconductors
Oleg A. Ryabushkin, Vladimir A. Sablikov, Nikolay S. Platonov, Vladimir Antonovich Bader, V. I. Sergeyev, D. Yu. Babkin
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Abstract
A new family of optical and optoelectronic elements is offered that's operation is based on controlling the current filament in semiconductors having an S-shaped current-voltage characteristic (CVC). The current filament is controlled by the action of fields (optical radiation, magnetic or electric field). The S-shaped CVC is a result of low-temperature avalanche ionization of shallow impurities in semiconductor epitaxial layers induced by an electric field (E approximately equals 1 - 10 V/cm). New elements, we shall call them cryo-elements, possess a low specific dissipated power on the order of 10-9 W/micrometers 3. The characteristic time of current filament formation is about 10-9 s. For controlling the current filament an extremely low (several photons per square micrometer in the region of fundamental absorption) light intensity is sufficient. The filament control is possible in a band from UV to IR.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Oleg A. Ryabushkin, Vladimir A. Sablikov, Nikolay S. Platonov, Vladimir Antonovich Bader, V. I. Sergeyev, and D. Yu. Babkin "Novel family of optical and optoelectronic elements for information processing using the current filament in semiconductors", Proc. SPIE 1751, Miniature and Micro-Optics: Fabrication and System Applications II, (13 January 1993); https://doi.org/10.1117/12.138879
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KEYWORDS
Electroluminescence

Optical components

Semiconductors

Resistance

Electrons

Gallium arsenide

Ionization

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