Laser annealing of silicon islands

Ol'ga Safronova; Alexander Komarnitskii; Vladimir Kukin; Boris Sedunov; Valerii V. Uzdovskii; Vladimir I. Khainovskii

doi:10.1117/12.130989

1 August 1992 Laser annealing of silicon islands

Ol'ga Safronova, Alexander Komarnitskii, Vladimir Kukin, Boris Sedunov, Valerii V. Uzdovskii, Vladimir I. Khainovskii

Proceedings Volume 1783, International Conference of Microelectronics: Microelectronics '92; (1992) https://doi.org/10.1117/12.130989
Event: International Conference on Microelectronics, 1992, Warsaw, Poland

Abstract

Laser recrystalization on silicon dioxide polysilicon islands by pulsed laser radiation has been carried out. As a result of laser treatment single-crystalline layers have been produced which were investigated by means of translucent electron microscopy. It has been shown that the solution obtained for temperature distribution can be expressed via elliptical Jacoby sine. The n-channel metal-dielectric-semiconductor transistors with electric parameters close to the device made on crystal substrate are prepared on the island regions by the method of planar technology.

Citation Download Citation

Ol'ga Safronova, Alexander Komarnitskii, Vladimir Kukin, Boris Sedunov, Valerii V. Uzdovskii, and Vladimir I. Khainovskii "Laser annealing of silicon islands", Proc. SPIE 1783, International Conference of Microelectronics: Microelectronics '92, (1 August 1992); https://doi.org/10.1117/12.130989

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