High-brightness unstable resonator semiconductor lasers

Richard K. DeFreez; Zhuoyu Bao; P. D. Carleson; Marc K. Felisky; Craig C. Largent

doi:10.1117/12.146934

16 June 1993 High-brightness unstable resonator semiconductor lasers

Richard K. DeFreez, Zhuoyu Bao, P. D. Carleson, Marc K. Felisky, Craig C. Largent

Proceedings Volume 1850, Laser Diode Technology and Applications V; (1993) https://doi.org/10.1117/12.146934
Event: OE/LASE'93: Optics, Electro-Optics, and Laser Applications in Scienceand Engineering, 1993, Los Angeles, CA, United States

Abstract

Based on a combination of high quality materials, advanced design considerations, and focused-ion-beam micromachining, unstable resonator semiconductor lasers (URSLs) have been fabricated in several material systems. GaAs/AlGaAs, InGaAs/GaAs, and GaInP/AlGaInP URSLs fabricated by FIBM have achieved brightness values of 100 to 400 MW/cm²/Sr which is one to two orders of magnitude greater than the brightness of commercial semiconductor lasers produced from the same material systems and with comparable dimensions.

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Richard K. DeFreez, Zhuoyu Bao, P. D. Carleson, Marc K. Felisky, and Craig C. Largent "High-brightness unstable resonator semiconductor lasers", Proc. SPIE 1850, Laser Diode Technology and Applications V, (16 June 1993); https://doi.org/10.1117/12.146934

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