Formation of AlGaAs/InGaAs buried-heterostructure laser diodes with high-quality lateral confinement interfaces

Naresh Chand; Niloy K. Dutta; Sung-Nee G. Chu; Alexei V. Syrbou; Alexandru Z. Mereutza; Vladimir P. Iacovlev

doi:10.1117/12.162735

19 November 1993 Formation of AlGaAs/InGaAs buried-heterostructure laser diodes with high-quality lateral confinement interfaces

Naresh Chand, Niloy K. Dutta, Sung-Nee G. Chu, Alexei V. Syrbou, Alexandru Z. Mereutza, Vladimir P. Iacovlev

Author Affiliations +

Proceedings Volume 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II; (1993) https://doi.org/10.1117/12.162735
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications II, 1993, Trieste, Italy

Abstract

We report a novel method for growth and fabrication of high performance strained AlGaAs/InGaAs quantum well buried heterostructure (BH) lasers. The method involves growth of the laser structure by molecular beam epitaxy, mesa formation by in-situ melt etching using SiO₂ stripes as a mask, and regrowth of p p n AlGaAs isolating layers by liquid phase epitaxy. The method allows etching, preservation of high quality sidewalls, regrowth and planarization in one step with negligible thermal disordering. Compared to ridge wave guide (RWG) lasers, the BH lasers so fabricated have significantly lower threshold current, higher power output, higher temperature operation, lower cavity losses, and kink free light-current (L-I) characteristics, as expected. A cw power of 150 mW/facet at 986 nm was measured from a 400 micrometers long BH laser with 11 micrometers active stripe width. A minimum threshold current of 2.5 mA was measured for lasers with 3.0-micrometers active width and 300 - 400 micrometers cavity length. The L-I characteristics of 500-, 800-, and 1300-micrometers long lasers with 3.0 micrometers active width were linear up to the currents corresponding to a current density of 10 kA cm^-2. At higher current densities, a sublinear increase of power with current was observed. Stable fundamental transverse mode operation was obtained up to 100 mW emitted power.

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Naresh Chand, Niloy K. Dutta, Sung-Nee G. Chu, Alexei V. Syrbou, Alexandru Z. Mereutza, and Vladimir P. Iacovlev "Formation of AlGaAs/InGaAs buried-heterostructure laser diodes with high-quality lateral confinement interfaces", Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); https://doi.org/10.1117/12.162735

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KEYWORDS

Interfaces

Semiconductor lasers

Etching

Laser damage threshold

Continuous wave operation

Heterojunctions

Liquid phase epitaxy

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