Excited-state structure and dephasing of point defects in widegap semiconductors: ultrafast four-wave mixing spectroscopy of N-V centers in diamond

Stephen C. Rand; A. Lenef; Steve W. Brown

doi:10.1117/12.165608

5 January 1994 Excited-state structure and dephasing of point defects in widegap semiconductors: ultrafast four-wave mixing spectroscopy of N-V centers in diamond

Stephen C. Rand, A. Lenef, Steve W. Brown

Author Affiliations +

Proceedings Volume 2041, Mode-locked and Other Ultrashort Laser Designs, Amplifiers, and Applications; (1994) https://doi.org/10.1117/12.165608
Event: Optics Quebec, 1993, Quebec City, Canada

Abstract

Pulsed laser spectroscopy has been applied to determine details of the excited state structure of the N-V center in diamond. Excited state splittings and dephasing behavior are reported.

Citation Download Citation

Stephen C. Rand, A. Lenef, and Steve W. Brown "Excited-state structure and dephasing of point defects in widegap semiconductors: ultrafast four-wave mixing spectroscopy of N-V centers in diamond", Proc. SPIE 2041, Mode-locked and Other Ultrashort Laser Designs, Amplifiers, and Applications, (5 January 1994); https://doi.org/10.1117/12.165608

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