High aspect ratio resist structures for optoelectronic (and other) applications

Martin C. Peckerar; Milton Rebbert; Ganesh K. Gopalakrishnan

doi:10.1117/12.167570

1 February 1994 High-aspect-ratio resist structures for optoelectronic (and other) applications

Martin C. Peckerar, Milton Rebbert, Ganesh K. Gopalakrishnan

Proceedings Volume 2045, Laser-Assisted Fabrication of Thin Films and Microstructures; (1994) https://doi.org/10.1117/12.167570
Event: Optics Quebec, 1993, Quebec City, Canada

Abstract

In this paper we discuss methods for fabricating high aspect ratio structures in thick photoresist. Resist thicknesses in excess of 10 microns can be patterned with near-micron features and with near vertical sidewalls using the techniques described herein. Limits of the lithography relating to dimension control and to maximum usable resist thickness are discussed. Applications of the process to optoelectronics and micromachining are described.

Citation Download Citation

Martin C. Peckerar, Milton Rebbert, and Ganesh K. Gopalakrishnan "High-aspect-ratio resist structures for optoelectronic (and other) applications", Proc. SPIE 2045, Laser-Assisted Fabrication of Thin Films and Microstructures, (1 February 1994); https://doi.org/10.1117/12.167570

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