Paper
1 February 1994 Photo-CVD of dielectric materials by pseudo-continuous excimer sources
Philippe Bergonzo, U. Kogelschatz, Ian W. Boyd
Author Affiliations +
Abstract
We report the use of vacuum ultraviolet (VUV) light generated from a new type of excimer lamp to initiate the deposition of dielectric thin films in a photo-chemical vapor deposition process. Compared with other lamps, these pseudo-continuous light sources can provide high photon fluxes (more than a few watts) over large areas. The photo-deposited film properties were determined using the usual techniques of ellipsometry, FTIR spectroscopy, and electrical measurements. Good film quality was obtained making this technique highly attractive. A layered combination of silicon oxide, silicon nitride, and silicon oxynitride can be produced in the same reactor at temperatures below 300 degree(s)C. The technique also offers very good control of the stoichiometry in the case of Silicon oxynitride film deposition, and therefore provides interesting perspectives for optical applications.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Philippe Bergonzo, U. Kogelschatz, and Ian W. Boyd "Photo-CVD of dielectric materials by pseudo-continuous excimer sources", Proc. SPIE 2045, Laser-Assisted Fabrication of Thin Films and Microstructures, (1 February 1994); https://doi.org/10.1117/12.167556
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CITATIONS
Cited by 6 scholarly publications.
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KEYWORDS
Xenon

Excimers

Lamps

Silicon

Dielectrics

Oxides

Refractive index

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