Study of reactions in the gaseous phase during SiC-layers deposition by CVD method

Czeslawa Paluszkiewicz; S. Jonas; W. S. Ptak; W. Sadowski

doi:10.1117/12.166723

31 January 1994 Study of reactions in the gaseous phase during SiC-layers deposition by CVD method

Czeslawa Paluszkiewicz, S. Jonas, W. S. Ptak, W. Sadowski

Proceedings Volume 2089, 9th International Conference on Fourier Transform Spectroscopy; (1994) https://doi.org/10.1117/12.166723
Event: Fourier Transform Spectroscopy: Ninth International Conference, 1993, Calgary, Canada

Abstract

The present work contains preliminary results of investigations of the gaseous phase composition in the course of preparation of SiC layers. The layers were deposited by decomposition of CH₃SiCl₃ diluted in the Ar stream during CVD process. FTIR spectra of the gaseous phase were recorded using a special reaction cell, at short time intervals and at various temperatures ranging from 300 K to 1200 K. Transition products of the reaction in the gas phase (SiCl₄ and CH₄ molecules) were observed at higher temperatures. The final product of the reaction, in the gaseous phase, i.e., HCl, was also detected.

Citation Download Citation

Czeslawa Paluszkiewicz, S. Jonas, W. S. Ptak, and W. Sadowski "Study of reactions in the gaseous phase during SiC-layers deposition by CVD method", Proc. SPIE 2089, 9th International Conference on Fourier Transform Spectroscopy, (31 January 1994); https://doi.org/10.1117/12.166723

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