Improved conductivity-measurement of semiconductor epitaxial layers by means of the contactless microwave method

P. Boege

doi:10.1117/12.2303271

1 January 1994 Improved conductivity-measurement of semiconductor epitaxial layers by means of the contactless microwave method

P. Boege

Author Affiliations +

Proceedings Volume 2250, International Conference on Millimeter and Submillimeter Waves and Applications 1994; 225072 (1994) https://doi.org/10.1117/12.2303271
Event: Millimeter and Submillimeter Waves and Applications: International Conference, 1994, San Diego, CA, United States

Abstract

Measurements and calculations of the scattering-characteristics of stratified lossy dielectric blocks completely filling a waveguide cross section are presented. The method is used for contactless con- ductivity measurements of MBE-grown II-VI semiconductor layers.

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P. Boege "Improved conductivity-measurement of semiconductor epitaxial layers by means of the contactless microwave method", Proc. SPIE 2250, International Conference on Millimeter and Submillimeter Waves and Applications 1994, 225072 (1 January 1994); https://doi.org/10.1117/12.2303271

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