Paper
15 May 1981 Wavelength-Dependent Photoionization Cross Section Of Se(1S) In The Vacuum Ultraviolet (VUV)
K. T. V. Grattan, M. R. Hutchinson, E. S. Theocharous
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Proceedings Volume 0236, 1980 European Conf on Optical Systems and Applications; (1981) https://doi.org/10.1117/12.959027
Event: 1980 European Conference on Optical Systems and Applications, 1980, Utrecht, Netherlands
Abstract
The photoionization cross section of excited atomic selenium, Se(1S0), obtained by photodissociation of 0CSe, has been measured in the wavelength region 170 - 175 nm using a tunable xenon laser. A minimum value, at 172 nm, was found to be 1.2 x 10-20cm2, approximately ten times less than a recently calculated value. The photodissociation cross section for OCSe, at the same wavelength, was found to be 0.8 x 10-16 cm2, in good agreement with published work. The effect of an electron cooling buffer gas upon the electron production from excited selenium was also investigated.
© (1981) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
K. T. V. Grattan, M. R. Hutchinson, and E. S. Theocharous "Wavelength-Dependent Photoionization Cross Section Of Se(1S) In The Vacuum Ultraviolet (VUV)", Proc. SPIE 0236, 1980 European Conf on Optical Systems and Applications, (15 May 1981); https://doi.org/10.1117/12.959027
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KEYWORDS
Selenium

Xenon

Chemical species

Sensors

Vacuum ultraviolet

Electrodes

Ionization

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