Microstress in high-pressure temperature-treated Czochralski-grown silicon with oxygen concentration up to 1.2x 10<sup>18</sup> cm<sup>-3</sup>

Andrzej Misiuk

doi:10.1117/12.224977

16 October 1995 Microstress in high-pressure temperature-treated Czochralski-grown silicon with oxygen concentration up to 1.2x 10¹⁸ cm^-3

Andrzej Misiuk

Author Affiliations +

Proceedings Volume 2373, Solid State Crystals: Materials Science and Applications; (1995) https://doi.org/10.1117/12.224977
Event: Solid State Crystals: Materials Science and Applications, 1994, Zakopane, Poland

Abstract

Phenomena related to microstress at the SiOx/Si boundary in Czochralski grown silicon single crystals with the initial interstitial oxygen concentration up to 1.2 multiplied by 10¹⁸ cm^-3, subjected to annealing at up to 1620 K under hydrostatic pressure up to 1.35 GPa, were investigated by deep-level transient spectroscopy (DLTS), selective etching, Fourier transform infrared spectroscopy (FTIR), and x ray methods. Depending on treatment conditions the enhanced microstress at the SiOx/Si boundary, creation of additional nucleation centers, and change of precipitate critical radius can promote oxygen precipitation (retard OP dissolution) also causing creation of additional defects. Qualitative explanation of some observed phenomena is proposed.

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Andrzej Misiuk "Microstress in high-pressure temperature-treated Czochralski-grown silicon with oxygen concentration up to 1.2x 10¹⁸ cm^-3", Proc. SPIE 2373, Solid State Crystals: Materials Science and Applications, (16 October 1995); https://doi.org/10.1117/12.224977

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