Dynamic properties of optoelectronic effect in a heterojunction laser in microwave range

Garif G. Akchurin

doi:10.1117/12.212501

19 June 1995 Dynamic properties of optoelectronic effect in a heterojunction laser in microwave range

Garif G. Akchurin

Proceedings Volume 2399, Physics and Simulation of Optoelectronic Devices III; (1995) https://doi.org/10.1117/12.212501
Event: Photonics West '95, 1995, San Jose, CA, United States

Abstract

Opto-electronic signal in the injection laser diode arises on the frequencies of mode beating of external cavity when internal multimode coherent radiation is detected by the active laser chip. Dynamic coefficient of transformation from radiation to injection current is measured in the range 150 MHz to 5 GHz. Fall down of frequency response in the range higher than 1 GHz was discovered, which is connected to finite life time of carriers in active channel.

Citation Download Citation

Garif G. Akchurin "Dynamic properties of optoelectronic effect in a heterojunction laser in microwave range", Proc. SPIE 2399, Physics and Simulation of Optoelectronic Devices III, (19 June 1995); https://doi.org/10.1117/12.212501

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available