Millimeter-wave characteristics of GaAs/GaInAs heterojunction in MITATT mode considering photon injection

Shankar P. Pati; S. Satpathy; A. K. Panda; G. N. Dash

doi:10.1117/12.205042

17 March 1995 Millimeter-wave characteristics of GaAs/GaInAs heterojunction in MITATT mode considering photon injection

Shankar P. Pati, S. Satpathy, A. K. Panda, G. N. Dash

Proceedings Volume 2401, Functional Photonic Integrated Circuits; (1995) https://doi.org/10.1117/12.205042
Event: Photonics West '95, 1995, San Jose, CA, United States

Abstract

Modulation of carrier multiplication factor in a reverse bias p—n junction can be realized through optical generation of carrier on either side of depletion layer which causes injection of photon—current along with thermal reverse saturation current into the denletion layer. The mm—wave characteristics of GaAs homo junction and GaAs/GaJnAs heterojunction in IMPATT and MITATT modes have been comDuted through device simulation process for wide range of values of carrier multiplication factor. The results indicate that the heterojunction provides considerably high efficiency compared to that of homo structure. The aprreciahle change i.n the ralue of diode negative resistance with photon injection (for low value of multiplication factor) would result in a fall in rf rower delivery from the diode. This property of changes in the out put power with change in multiplication factor can be used for detection of optical signal falling in the GaAs layer of both the homo and heterostructure diodes. Keywords : IMPATT ,MITATT,Heterostructure,Homostructure,Negative resistance.

Citation Download Citation

Shankar P. Pati, S. Satpathy, A. K. Panda, and G. N. Dash "Millimeter-wave characteristics of GaAs/GaInAs heterojunction in MITATT mode considering photon injection", Proc. SPIE 2401, Functional Photonic Integrated Circuits, (17 March 1995); https://doi.org/10.1117/12.205042

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