High-resolution CCD linear image sensors for the advanced visible and near-infrared radiometer (AVNIR)

Tadashi Shiraishi; Sotoju Asai; Naofumi Murata; Muneo Hatta; Takashi Kadowaki; Hirokazu Tanaka; Yoshio Tange; Yuji Miyachi; Kouichi Inoue

doi:10.1117/12.206508

10 April 1995 High-resolution CCD linear image sensors for the advanced visible and near-infrared radiometer (AVNIR)

Tadashi Shiraishi, Sotoju Asai, Naofumi Murata, Muneo Hatta, Takashi Kadowaki, Hirokazu Tanaka, Yoshio Tange, Yuji Miyachi, Kouichi Inoue

Author Affiliations +

Proceedings Volume 2415, Charge-Coupled Devices and Solid State Optical Sensors V; (1995) https://doi.org/10.1117/12.206508
Event: IS&T/SPIE's Symposium on Electronic Imaging: Science and Technology, 1995, San Jose, CA, United States

Abstract

Two types of high resolution CCD linear image sensors have been developed for AVNIR, which will be carried on the Advanced Earth Observing Satellite (ADEOS) in early 1996. One has 10000 pixels (pixel size: 8 micrometers X 8 micrometers ) with spacing of 8 micrometers for the panchromatic band (0.52 - 0.69 micrometers ). The other has 5000 pixels (pixel size: 16 micrometers X 16 micrometers ) with spacing of 16 micrometers for the multispectral bands (Mu1: 0.42 - 0.50 micrometers , Mu2: 0.52 - 0.60 micrometers , Mu3: 0.61 - 0.69 micrometers , and Mu4: 0.76 - 0.89 micrometers ). These bands are separated by a dichroic prism in the optical system. Each sensor has a staggered layout of Si p-n-p buried photodiodes, and an overflow drain for an anti- blooming and an electronic shutter operation. The sensor for the multispectral band (MU) has 2 CCDs and the sensor for the panchromatic band (PA) has 4 CCDs to reduce operating frequency. To prevent degradation of modulation transfer function (MTF) for the Mu4 band, which is a near-infrared region, we used a staggered arrangement and p^- on p⁺ epitaxial wafers. MTF in Mu4 band is 0.62 and 0.80 at Nyquist frequency (fn) and 1/2 fn, respectively. We have developed novel packaging technologies so as to obtain a focal plane flatness of less than 10 micrometers peak-to-peak. These technologies include a newly developed SiC-Al₂O₃-SiC package and a method to correct a warp of the chip surface.

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Tadashi Shiraishi, Sotoju Asai, Naofumi Murata, Muneo Hatta, Takashi Kadowaki, Hirokazu Tanaka, Yoshio Tange, Yuji Miyachi, and Kouichi Inoue "High-resolution CCD linear image sensors for the advanced visible and near-infrared radiometer (AVNIR)", Proc. SPIE 2415, Charge-Coupled Devices and Solid State Optical Sensors V, (10 April 1995); https://doi.org/10.1117/12.206508

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KEYWORDS

Charge-coupled devices

CCD image sensors

Photodiodes

Sensors

Image sensors

Modulation transfer functions

Silicon

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