Development of gallium-doped silicon 128x192 element arrays for 8-14um observation

Christian Lucas; Isabelle Bischoff; Gilles Chammings; Michel Ravetto; Frederic Rothan; Michel Vilain; Philippe Galdemard; Rene Jouan; Pierre-Olivier Lagage; Pierre Masse

doi:10.1117/12.211292

6 June 1995 Development of gallium-doped silicon 128 x 192 element arrays for 8-14 μm observation

Christian Lucas, Isabelle Bischoff, Gilles Chammings, Michel Ravetto, Frederic Rothan, Michel Vilain, Philippe Galdemard, Rene Jouan, Pierre-Olivier Lagage, Pierre Masse

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Proceedings Volume 2475, Infrared Detectors and Instrumentation for Astronomy; (1995) https://doi.org/10.1117/12.211292
Event: SPIE's 1995 Symposium on OE/Aerospace Sensing and Dual Use Photonics, 1995, Orlando, FL, United States

Abstract

New gallium-doped silicon 128 X 192 element arrays have been achieved at CEA-LETI- LIR (Infrared Laboratory) for imaging in the 8 - 14 micrometers spectral range. This program is in keeping with the previous detector developments for the ISOCAM camera (32 X 32 element arrays) and for ground-based observations (64 X 64 element arrays). The main features of the new detectors are: a pitch of 75 micrometers which leads to 10 X 15 mm² chip dimensions, two selectable storage capacities (respectively 0.1 and 0.5 pF), a DVR readout circuit achieved in an NMOS silicon line with 1.5 micrometers design rules. The main electro-optical performances are the following: a peak responsivity of 4.0 A/W, a noise of 58 fArms over the 0.1 - 128 Hz spectral band which is very close to the BLIP noise, and a corresponding noise equivalent power of 1.4 10^-14 W.

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Christian Lucas, Isabelle Bischoff, Gilles Chammings, Michel Ravetto, Frederic Rothan, Michel Vilain, Philippe Galdemard, Rene Jouan, Pierre-Olivier Lagage, and Pierre Masse "Development of gallium-doped silicon 128 x 192 element arrays for 8-14 μm observation", Proc. SPIE 2475, Infrared Detectors and Instrumentation for Astronomy, (6 June 1995); https://doi.org/10.1117/12.211292

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