UV photodetectors based on AlxGa1-xN grown by MOCVD

Adam W. Saxler; Danielle Walker; Xiaolong Zhang; Patrick Kung; Jianren Xu; Manijeh Razeghi

doi:10.1117/12.237697

12 April 1996 UV photodetectors based on Al_xGa_1-xN grown by MOCVD

Adam W. Saxler, Danielle Walker, Xiaolong Zhang, Patrick Kung, Jianren Xu, Manijeh Razeghi

Proceedings Volume 2685, Photodetectors: Materials and Devices; (1996) https://doi.org/10.1117/12.237697
Event: Photonics West '96, 1996, San Jose, CA, United States

Abstract

Metalorganic chemical vapor deposition was used to deposit Al_xGa_1-xN active layers with varying aluminum compositions on basal plane sapphire substrate. Al_xGa_1-xN (x < 0.5) ultraviolet photodetectors have been fabricated and characterized with cut-off wavelengths as short as 260 nm. Carrier lifetimes on the order of 10 milliseconds were estimated from frequency dependent measurements of the responsivity.

Citation Download Citation

Adam W. Saxler, Danielle Walker, Xiaolong Zhang, Patrick Kung, Jianren Xu, and Manijeh Razeghi "UV photodetectors based on Al_xGa_1-xN grown by MOCVD", Proc. SPIE 2685, Photodetectors: Materials and Devices, (12 April 1996); https://doi.org/10.1117/12.237697

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