Paper
8 April 1996 UV photosensitivity in PECVD-grown germanosilicate waveguides
David J. Moss, Mike V. Bazylenko, Mark Gross, Pak Lim Chu, Marcy Faith, Patrick W. Leech, P. Kemeny, Morten Ibsen, Otto Leistiko, C. V. Poulson, John D. Love, Francois J. Ladouceur
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Abstract
We demonstrate all optically (UV) written waveguide grating structures in germanosilicate trilayers grown by conventional PECVD, as well as novel results with a new hollow cathode PECVD growth technique which is capable of producing films having either positive or negative UV photosensitivity.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
David J. Moss, Mike V. Bazylenko, Mark Gross, Pak Lim Chu, Marcy Faith, Patrick W. Leech, P. Kemeny, Morten Ibsen, Otto Leistiko, C. V. Poulson, John D. Love, and Francois J. Ladouceur "UV photosensitivity in PECVD-grown germanosilicate waveguides", Proc. SPIE 2703, Lasers as Tools for Manufacturing of Durable Goods and Microelectronics, (8 April 1996); https://doi.org/10.1117/12.237769
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KEYWORDS
Semiconducting wafers

Waveguides

Plasma enhanced chemical vapor deposition

Ultraviolet radiation

Germanium

Electrodes

Hydrogen

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