Infrared Reflectance Spectra Of Thin-Epitaxial Silicon Layers

Benjamin Senitzky; S. P. Weeks

doi:10.1117/12.931710

30 April 1981 Infrared Reflectance Spectra Of Thin-Epitaxial Silicon Layers

Benjamin Senitzky, S. P. Weeks

Proceedings Volume 0276, Optical Characterization Techniques for Semiconductor Technology; (1981) https://doi.org/10.1117/12.931710
Event: 1981 Microlithography Conferences, 1981, San Jose, United States

Abstract

IR reflectance spectra of thin (>0.5μm) epitaxial layers on substrates containing n-type buried layers are investigated in the 5μm to 50μm wavelength range. From measurements on uniformly doped wafers it is found that the Drude model with a constant relaxation time should be used to compute the optical constants of the buried layers. The reflectance spectra can then be used to determine epitaxial layer thickness, peak concentration of the buried layer and the thickness of the buried layer. For our process conditions the optically measured epitaxial thick-ness and peak concentration are in close agreement to measurements performed with a secon-dary ion microprobe.

Citation Download Citation

Benjamin Senitzky and S. P. Weeks "Infrared Reflectance Spectra Of Thin-Epitaxial Silicon Layers", Proc. SPIE 0276, Optical Characterization Techniques for Semiconductor Technology, (30 April 1981); https://doi.org/10.1117/12.931710

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