Paper
24 July 1996 Chemically amplified resist process for 0.25-μm generation photomasks
Mikio Katsumata, Hiroichi Kawahira, Minoru Sugawara, Satoru Nozawa
Author Affiliations +
Abstract
A chemically amplified (CA) negative electron beam resist process is developed for fabricating 0.25 μm devices 4X magnification reticles. In order to improve a critical dimension (CD) uniformity on reticles, a precise temperature controllability in post exposure baking (PEB) is realized. Dry etching for Cr is also adopted for getting an appropriate pattern fidelity down to submicron on reticles to meet requirements for such as optical proximity effect correction. Under the optimized process conditions, a CD uniformity of 0.016 μm in 3σ is achieved on reticles. A CD linearity of down to 0.8 μm on the reticles is ensured as well. Actual 0.25 μm device reticle production results show that the CD mean variation is controlled within ± 0.040 μm. It is confirmed that an advanced 4X reticle fabrication process for 0.25 μm device generation is realized.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mikio Katsumata, Hiroichi Kawahira, Minoru Sugawara, and Satoru Nozawa "Chemically amplified resist process for 0.25-μm generation photomasks", Proc. SPIE 2793, Photomask and X-Ray Mask Technology III, (24 July 1996); https://doi.org/10.1117/12.245249
Lens.org Logo
CITATIONS
Cited by 1 scholarly publication and 3 patents.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Reticles

Critical dimension metrology

Dry etching

Photoresist processing

Chromium

Photomasks

Optical proximity correction

RELATED CONTENT


Back to Top