Paper
24 July 1996 Pattern shift error induced by coating and developing
Author Affiliations +
Abstract
Improvement of pattern placement accuracy is an important factor for the development of the electron beam (EB) lithography system for the next-generation photomask. It has been qualitatively pointed out that pattern shift error is induced by surface distortion of photomask. In this paper, we quantified pattern shift error induced by mask process and have identified aeolotropic magnification error and negligible orthogonality error. These results obtained by experiment and simulation indicate that attention must be paid to pattern shift error induced by mask process in fabrication of the next-generation photomask. Thus, a more rigid and stiffer photomask will be required to reduce pattern shift error induced by coating and developing.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shusuke Yoshitake, Kazuto Matsuki, Ryoichi Hirano, and Toru Tojo "Pattern shift error induced by coating and developing", Proc. SPIE 2793, Photomask and X-Ray Mask Technology III, (24 July 1996); https://doi.org/10.1117/12.245203
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Photomasks

Coating

Distortion

Lithography

Device simulation

Electron beam lithography

Electron beams

RELATED CONTENT

LEEPL production tool: EBPrinter LEEPL-3000
Proceedings of SPIE (May 20 2004)
Electron-Beam Lithography Error Sources
Proceedings of SPIE (June 18 1984)
Absolute pattern placement metrology on wafers
Proceedings of SPIE (August 04 1993)
Evaluation of overlay accuracy of phase shift image for 65...
Proceedings of SPIE (December 06 2004)

Back to Top