Deposition and analysis of carbon and silicon clusters generated by laser-induced gas phase reaction

M. Ehbrecht; H. Ferkel; Friedrich Huisken; L. Holz; Yu. N. Polivanov; V. V. Smirnov; O. M. Stelmakh

doi:10.1117/12.242173

10 June 1996 Deposition and analysis of carbon and silicon clusters generated by laser-induced gas phase reaction

M. Ehbrecht, H. Ferkel, Friedrich Huisken, L. Holz, Yu. N. Polivanov, V. V. Smirnov, O. M. Stelmakh

Proceedings Volume 2802, Laser Chemistry, Biophysics, and Biomedicine; (1996) https://doi.org/10.1117/12.242173
Event: International Conference on Coherent and Nonlinear Optics, 1995, St. Petersburg, Russian Federation

Abstract

Laser driven gas-phase synthesis in a flow reactor was employed for the production of carbon and silicon cluster beams starting from gaseous compounds. It is based on a CO₂-laser-induced decomposition of molecular gases containing carbon and silicon, such as C₂H₂ and SiH4. By introducing a skimmer into the reaction zone, the generated clusters are transferred to the free molecular flow and analyzed with a time-of-flight mass spectrometer. The carbon clusters are characterized by a bimodal distribution. In the region of lower masses C(subscript n clusters were observed up to n equals 19 with the progression n equals 1. In the higher mass fullerenes were observed C₆₀ and C₇₀. Also observed were two types of silicon: clusters with number of atoms up to 12 and also large ones with number of atoms 700 - 1000 which corresponds to nanometer-size. These clusters were deposited on a silicon or sapphire target at room temperature. Micro-Raman spectroscopy techniques were used for characterization of these deposits. In particular for silicon two features in the Raman spectrum were evident: one broad band and a sharp peak which correspondently were attributed to silicon amorphous and crystalline phase and that nanocrystallites deposited on the substrate consist of about 800 atoms (quantum dots with a size of about 3 nm). Thus, the present studies show that the laser-driven nucleation in a flow reactor is a powerful technique to produce fullerenes and silicon quantum dots and other nano- size semiconductors or high-temperature evaporated materials.

Citation Download Citation

M. Ehbrecht, H. Ferkel, Friedrich Huisken, L. Holz, Yu. N. Polivanov, V. V. Smirnov, and O. M. Stelmakh "Deposition and analysis of carbon and silicon clusters generated by laser-induced gas phase reaction", Proc. SPIE 2802, Laser Chemistry, Biophysics, and Biomedicine, (10 June 1996); https://doi.org/10.1117/12.242173

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
9 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Silicon

Raman spectroscopy

Carbon

Chemical species

Semiconductor lasers

Nanocrystals

Fullerenes

Show All Keywords

Keywords/Phrases

Search In:

Publication Years