Numerical simulation and analysis of the new 8- to 14-um GaAs/GaAlAs quantum well infrared photodetectors

Qun Li; Chun-Xia Du; Jun Deng; Rui Kong; Bao-Quan Liu; Guangdi Shen; Jie Yin

doi:10.1117/12.252092

25 September 1996 Numerical simulation and analysis of the new 8- to 14-um GaAs/GaAlAs quantum well infrared photodetectors

Qun Li, Chun-Xia Du, Jun Deng, Rui Kong, Bao-Quan Liu, Guangdi Shen, Jie Yin

Author Affiliations +

Proceedings Volume 2894, Detectors, Focal Plane Arrays, and Applications; (1996) https://doi.org/10.1117/12.252092
Event: Photonics China '96, 1996, Beijing, China

Abstract

The simulation of a new type of GaAs/GaAlAs quantum well infrared photodetectors based on a new physics mechanism has been performed. The essential work is concentrated on the device parameters' influence on the energy levels and absorption peaks, they would have important effects on device design. Moreover, a new characteristics-infrared detector with bias-tuned wavelength is proposed.

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Qun Li, Chun-Xia Du, Jun Deng, Rui Kong, Bao-Quan Liu, Guangdi Shen, and Jie Yin "Numerical simulation and analysis of the new 8- to 14-um GaAs/GaAlAs quantum well infrared photodetectors", Proc. SPIE 2894, Detectors, Focal Plane Arrays, and Applications, (25 September 1996); https://doi.org/10.1117/12.252092

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