Comparative study of laser- and ion implantation-induced quantum well intermixing in GaInAsP/InP microstructures

Jan J. Dubowski; N. Sylvain Charbonneau; Alain P. Roth; Philip J. Poole; Charles Lacelle; Margaret Buchanan; Ian V. Mitchell; Richard D. Goldberg

doi:10.1117/12.273717

9 May 1997 Comparative study of laser- and ion implantation-induced quantum well intermixing in GaInAsP/InP microstructures

Jan J. Dubowski, N. Sylvain Charbonneau, Alain P. Roth, Philip J. Poole, Charles Lacelle, Margaret Buchanan, Ian V. Mitchell, Richard D. Goldberg

Author Affiliations +

Proceedings Volume 2991, Laser Applications in Microelectronic and Optoelectronic Manufacturing II; (1997) https://doi.org/10.1117/12.273717
Event: Photonics West '97, 1997, San Jose, CA, United States

Abstract

Laser-induced quantum well intermixing (laser-QWI) and ion implantation-induced quantum well intermixing (II-QWI) techniques have been studied to selectively modify the optical properties of GaInAsP/InP laser microstructures. Following the annealing with a cw Nd:YAG laser, a blue shift in the quantum well photoluminescence of up to 124 nm was observed for samples annealed up to 4 min. A comparison of the laser annealing results with those of II-QWI, which were obtained for the same GaInAsP/InP microstructure, indicates that laser- QWI yields material with comparable, or better optical properties. The one-step processing used in the laser-QWI approach makes it an attractive alternative in fabricating photonic integrated circuits at low cost.

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Jan J. Dubowski, N. Sylvain Charbonneau, Alain P. Roth, Philip J. Poole, Charles Lacelle, Margaret Buchanan, Ian V. Mitchell, and Richard D. Goldberg "Comparative study of laser- and ion implantation-induced quantum well intermixing in GaInAsP/InP microstructures", Proc. SPIE 2991, Laser Applications in Microelectronic and Optoelectronic Manufacturing II, (9 May 1997); https://doi.org/10.1117/12.273717

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