Pulsed laser deposition of ferroelectric thin films for active microwave electronic devices

James S. Horwitz; Douglas B. Chrisey; A. C. Carter; Wontae Chang; Lee A. Knauss; Jeffrey M. Pond; Steven W. Kirchoefer; D. Korn; Syen B. Qadri

doi:10.1117/12.273731

9 May 1997 Pulsed laser deposition of ferroelectric thin films for active microwave electronic devices

James S. Horwitz, Douglas B. Chrisey, A. C. Carter, Wontae Chang, Lee A. Knauss, Jeffrey M. Pond, Steven W. Kirchoefer, D. Korn, Syen B. Qadri

Author Affiliations +

Proceedings Volume 2991, Laser Applications in Microelectronic and Optoelectronic Manufacturing II; (1997) https://doi.org/10.1117/12.273731
Event: Photonics West '97, 1997, San Jose, CA, United States

Abstract

High quality thin films of Sr_xBa_(1-x)TiO₃ are currently being grown using pulsed laser deposition (PLD). These films are being used for the construction of frequency tunable microwave electronic devices. In particular, a low phase noise, voltage controlled oscillator (1.5 - 2.5 GHz) is currently being developed. Single phase and oriented Sr_xBa_(1-x)TiO₃ films have been deposited by PLD onto (100) LaAlO₃ and MgO and single crystal Ag films. The dielectric properties of these films has been measured at 1 MHz and between 1 and 20 GHz. A 75% change in the capacitance can be achieved using a 40 V bias across a 5 micrometer interdigital capacitor gap (80 kV/cm). The dissipation factor (measured at 1 MHz) depends on film composition and temperature. Dielectric loss measurement at 1 - 20 GHz have shown a dielectric loss tangent as small as 1.25 multiplied by 10^-2.

Citation Download Citation

James S. Horwitz, Douglas B. Chrisey, A. C. Carter, Wontae Chang, Lee A. Knauss, Jeffrey M. Pond, Steven W. Kirchoefer, D. Korn, and Syen B. Qadri "Pulsed laser deposition of ferroelectric thin films for active microwave electronic devices", Proc. SPIE 2991, Laser Applications in Microelectronic and Optoelectronic Manufacturing II, (9 May 1997); https://doi.org/10.1117/12.273731

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