Paper
6 June 1997 Carrier transport effects on pulse statistics of modulated quantum well lasers
Luis Pesquera, Nasreldin Mustafa, Ignacio Esquivias
Author Affiliations +
Abstract
We perform a theoretical study of carrier transport effects on the pulse statistics of QW lasers modulated at GHz rates for different bias levels, Ib, and modulation frequencies. The lasers considered are ultra-high speed In0.35Ga0.65As/GaAs MQW lasers with intrinsic modulation bandwidths of 40GHz. A rate-equation model, including spontaneous emission noise, which incorporates the dynamics of the unconfined carriers in the core is used. Different values of the transport/capture time, (tau) cap, and the re-emission time out of the QW's (escape time) (tau) esc, are considered to illustrate carrier transport effects. Different bias currents near threshold are considered. In this way small enough turn-on delay times and good on-off ratio are obtained.It is found that for slow modulation the laser switch-on is delayed and the timing jitter is increased when (tau) cap increases and (tau) esc decreases. These detrimental effects are reduced at high rates. However, the maximum modulation frequency decreases when (tau) cap increases. Concerning the combined dependence of turn-on time of Ib and on the modulation frequency, the results are similar to those obtained for bulk lasers when (tau) cap is not very large, even for small (tau) esc. Timing jitter becomes rather independent of the modulation frequency at GHz rates when biasing slightly below threshold. However, for large (tau) cap timing jitter increases with the modulation period. The dependence on the modulation frequency is due to the initial condition at the beginning of a pulse, that is very different from the steady state associated to Ib.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Luis Pesquera, Nasreldin Mustafa, and Ignacio Esquivias "Carrier transport effects on pulse statistics of modulated quantum well lasers", Proc. SPIE 2994, Physics and Simulation of Optoelectronic Devices V, (6 June 1997); https://doi.org/10.1117/12.275599
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Cited by 2 scholarly publications.
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KEYWORDS
Modulation

Quantum wells

Picosecond phenomena

Bulk lasers

Pulsed laser operation

Laser damage threshold

Switches

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