Enhanced hydrogenation in polycrystalline Si thin films using ultrasound treatment

Sergei Ostapenko; Yaroslav Koshka; Lubek Jastrzebski; Ronald K. Smeltzer

doi:10.1117/12.270294

10 April 1997 Enhanced hydrogenation in polycrystalline Si thin films using ultrasound treatment

Sergei Ostapenko, Yaroslav Koshka, Lubek Jastrzebski, Ronald K. Smeltzer

Proceedings Volume 3014, Active Matrix Liquid Crystal Displays Technology and Applications; (1997) https://doi.org/10.1117/12.270294
Event: Electronic Imaging '97, 1997, San Jose, CA, United States

Abstract

Ultrasound treatment (UST) was applied to improve electronic properties of polycrystalline silicon films on glass. A strong decrease of sheet resistance was observed in plasma hydrogenated films at UST temperatures lower than 100 degrees C. An enhanced passivation of grain boundary defects after UST was directly measured by nano-scale contact potential difference with atomic force microscope. These strong UST effects are accompanied by improvement of hydrogenation homogeneity as confirmed by spatially resolved photoluminescence study. We also observed a dramatic increase of intra-red photoluminescence (PL) intensity by a factor of two orders of magnitude after a few minutes of UST at elevated temperatures up to 280 degrees C. IN films obtained by solid-phase crystallization of (alpha) -Si, UST activates a new PL maximum at 0.9eV related to the amorphous fraction of poly-Si films. A new mechanism of ultrasound stimulated hydrogenation of dangling bonds in polycrystalline and amorphous Si films is proposed. UST processing was also applied to plasma hydrogenated poly-Si thin film transistors. We found UST stimulated reduction of a leakage current and shift of a threshold voltage, which can be beneficial for AMLCD applications.

Citation Download Citation

Sergei Ostapenko, Yaroslav Koshka, Lubek Jastrzebski, and Ronald K. Smeltzer "Enhanced hydrogenation in polycrystalline Si thin films using ultrasound treatment", Proc. SPIE 3014, Active Matrix Liquid Crystal Displays Technology and Applications, (10 April 1997); https://doi.org/10.1117/12.270294

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