Paper
7 July 1997 Effect of polymer structure on dissolution-rate characteristics in carboxylated alicyclic polymers for 193-nm lithography
Shigeyuki Iwasa, Katsumi Maeda, Kaichiro Nakano, Etsuo Hasegawa
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Abstract
We characterize the effect of structure on the dissolution rate and adhesion of poly(carboxy-tricyclodecylmethyl methacrylate) which is the base polymer for ArF excimer laser lithography. The adhesion of the polymer decreases with an increase in the protection ratio, and 60% tert-butyl protection causes stripping and collapse of the pattern in 2.38% tetramethylammonium hydroxide (TMAH) developer. We synthesize novel protection groups: menthyl derivatives and a hydroxy-tricyclodecyl (meth)acrylate [TCD(M)AOH] unit, and confirm their improved adhesion and dissolution inhibiting effects in the 2.38% TMAH developer. We obtain a 0.35 micrometer pattern using a resist based on a terpolymer containing TCDAOH and the standard developer.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shigeyuki Iwasa, Katsumi Maeda, Kaichiro Nakano, and Etsuo Hasegawa "Effect of polymer structure on dissolution-rate characteristics in carboxylated alicyclic polymers for 193-nm lithography", Proc. SPIE 3049, Advances in Resist Technology and Processing XIV, (7 July 1997); https://doi.org/10.1117/12.275812
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CITATIONS
Cited by 3 scholarly publications.
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KEYWORDS
Polymers

Standards development

Lithography

Chlorine

Dielectrics

Resistance

Silicon

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