256 x 256 LWIR FPAs using MBE-grown HgCdTe on Si substrates

Akira Ajisawa; Masaya Kawano; Mitsuko Tomono; Masaru Miyoshi; Naoki Oda

doi:10.1117/12.280343

13 August 1997 256 x 256 LWIR FPAs using MBE-grown HgCdTe on Si substrates

Akira Ajisawa, Masaya Kawano, Mitsuko Tomono, Masaru Miyoshi, Naoki Oda

Proceedings Volume 3061, Infrared Technology and Applications XXIII; (1997) https://doi.org/10.1117/12.280343
Event: AeroSense '97, 1997, Orlando, FL, United States

Abstract

We have developed hybrid 256 by 256 focal plane arrays (FPAs) using MBE grown HgCdTe(MCT) layers on Si substrates for 10 micrometer-wavelength band detection and successfully demonstrated infrared images for the first time. The characteristics of MCT-on-Si-substrate FPAs have been compared with those for MCT-on-GaAs-substrate FPAs. MCT epilayers grown on 3-inch Si substrates used in FPAs were found to have almost the same characteristics as MCT epilayers on GaAs, including etch pit density of 1 - 2 X 10⁶cm^-2 and p-type carrier concentration of 1 - 2 X 10¹⁶ cm^-3. The 256 by 256 photodiode array consists of n⁺-on-p junctions formed by boron-ion implantation and ZnS films for surface passivation. It was hybridized on a silicon readout circuit with an indium bump array. The mean value of R_OA for the diode array was measured and found to be 80 (Omega) cm² with a cutoff wavelength of 8.7 micrometer at 77 K; this is comparable to the typical value for a diode array using MCT grown on GaAs substrates. A diode array with 95% operability was placed in a camera system with which infrared images were taken, and high image sensitivity was found to be obtained.

Citation Download Citation

Akira Ajisawa, Masaya Kawano, Mitsuko Tomono, Masaru Miyoshi, and Naoki Oda "256 x 256 LWIR FPAs using MBE-grown HgCdTe on Si substrates", Proc. SPIE 3061, Infrared Technology and Applications XXIII, (13 August 1997); https://doi.org/10.1117/12.280343

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