Paper
14 August 1997 Lithography using a compact plasma focus electron source
Paul Choon Keat Lee, X. Feng, Guan Zhang, Mahe Liu, Sing Lee
Author Affiliations +
Proceedings Volume 3183, Microlithographic Techniques in IC Fabrication; (1997) https://doi.org/10.1117/12.280538
Event: ISMA '97 International Symposium on Microelectronics and Assembly, 1997, Singapore, Singapore
Abstract
A 1.6kJ compact plasma focus source operated in neon at 5 Hz was demonstrated as an electron source for microlithography. LIthographs were obtained by exposing the resist (PMMA) to an electron beam emitted from the plasma focus through an extraction channel in its anode with a mask in contact with the resist. The total energy in the beam was estimated from the lithographs to be > 20mJ per shot with electron energy > 20kV, and > 1J with electron energy approximately 10keV. The electron beam from this plasma focus is able to expose greater than 1 cm2 of resist placed 17cm from the source. Many samples with good resolution have ben obtained. An exposure can be mae on PMMA with only 10 shots over a period of 2 seconds. It is expected that with a higher sensitivity resist, an exposure can be made with a single shot.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Paul Choon Keat Lee, X. Feng, Guan Zhang, Mahe Liu, and Sing Lee "Lithography using a compact plasma focus electron source", Proc. SPIE 3183, Microlithographic Techniques in IC Fabrication, (14 August 1997); https://doi.org/10.1117/12.280538
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KEYWORDS
Plasma

Lithography

Electron beams

Polymethylmethacrylate

Beam analyzers

Neon

Optical lithography

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