Narrow-channel transistor threshold self-adjustment technique for ULSI with LOCOS isolation

Konstantin V. Loiko; Igor V. Peidous; Hok-Min Ho; John F. Bromley-Barratt; Elgin T. Quek; David Hsuan Yu Lim

doi:10.1117/12.284615

27 August 1997 Narrow-channel transistor threshold self-adjustment technique for ULSI with LOCOS isolation

Konstantin V. Loiko, Igor V. Peidous, Hok-Min Ho, John F. Bromley-Barratt, Elgin T. Quek, David Hsuan Yu Lim

Proceedings Volume 3212, Microelectronic Device Technology; (1997) https://doi.org/10.1117/12.284615
Event: Microelectronic Manufacturing, 1997, Austin, TX, United States

Abstract

A method for the compensation of the narrow-width effect of local oxidation and the self-adjustment of the narrow-channel transistor threshold voltage is proposed. The method enables the significant improvement of the device characteristics and isolation performance.

Citation Download Citation

Konstantin V. Loiko, Igor V. Peidous, Hok-Min Ho, John F. Bromley-Barratt, Elgin T. Quek, and David Hsuan Yu Lim "Narrow-channel transistor threshold self-adjustment technique for ULSI with LOCOS isolation", Proc. SPIE 3212, Microelectronic Device Technology, (27 August 1997); https://doi.org/10.1117/12.284615

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