Implementation of in-line Fowler-Nordheim testing for tunnel oxide thickness determination in manufacturing

Laura D. John; Richard G. Cosway; Mark D. Griswold; Gerald M. Lamb

doi:10.1117/12.284671

2 September 1997 Implementation of in-line Fowler-Nordheim testing for tunnel oxide thickness determination in manufacturing

Laura D. John, Richard G. Cosway, Mark D. Griswold, Gerald M. Lamb

Author Affiliations +

Proceedings Volume 3215, In-Line Characterization Techniques for Performance and Yield Enhancement in Microelectronic Manufacturing; (1997) https://doi.org/10.1117/12.284671
Event: Microelectronic Manufacturing, 1997, Austin, TX, United States

Abstract

As the cost per finished wafer increases, in-line characterization becomes an effective way to identify and control critical process parameters prior to end-of-line. In-line characterization enables testing of important process specifications during fabrication. By using in-line characterization, process problems can be immediately discovered. Alternatively, waiting for results from parametric probe can be a costly choice. This work focuses on the application of in-line electrical measurement of critical oxide thicknesses for process control. Specifically, in-line characterization is being applied to test structures in an effort to electrically characterize tunnel oxide thickness on Non-Volatile Memory parts. Using a Keithley Semiconductor Metrology System we have been able to obtain this electrical information without the need to scrap material following the measurement. We will summarize the necessary steps for implementation of such an electrical test and we will present a methodology to control film thickness using the results of electrical measurements.

Citation Download Citation

Laura D. John, Richard G. Cosway, Mark D. Griswold, and Gerald M. Lamb "Implementation of in-line Fowler-Nordheim testing for tunnel oxide thickness determination in manufacturing", Proc. SPIE 3215, In-Line Characterization Techniques for Performance and Yield Enhancement in Microelectronic Manufacturing, (2 September 1997); https://doi.org/10.1117/12.284671

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