Paper
15 September 1982 Cascade AlGaAs-GaAs Solar Cell Research Using Molecular Beam Epitaxy
D. L. Miller, H. T. Yang, S. W. Zehr
Author Affiliations +
Proceedings Volume 0323, Semiconductor Growth Technology; (1982) https://doi.org/10.1117/12.934271
Event: 1982 Los Angeles Technical Symposium, 1982, Los Angeles, United States
Abstract
For both space and terrestrial applications, improvement of solar cell conversion efficiency has a strong leverage on the power/weight and power/cost ratios for photovoltaic arrays. Currently, several strategies for efficiency improvement are being actively pursued. These include (1) the use of sunlight concentration which, in addition to improving specific cell efficiency, also substitutes relatively sheap concentrator cell area for relatively expensive cell area, (2) the use of direct bandgap semiconductors which absorb all the usable photons in only a few microns of material and also can provide a better match to the solar spectrum, and (3) the assembly of carefully chosen combinations of differing band-gap semiconductors into multijunction cascade convertersl. The latter multijunction cascade strategy provides a particularly potent means of improving the overall converter efficiency.
© (1982) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D. L. Miller, H. T. Yang, and S. W. Zehr "Cascade AlGaAs-GaAs Solar Cell Research Using Molecular Beam Epitaxy", Proc. SPIE 0323, Semiconductor Growth Technology, (15 September 1982); https://doi.org/10.1117/12.934271
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Cited by 2 scholarly publications.
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KEYWORDS
Gallium arsenide

Diffusion

Solar cells

Gallium

Silicon

Doping

Aluminum

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